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Si Avalanche Photodetectors
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Thorlabs' Silicon Avalanche Photodetectors (APD) are designed to offer increased sensitivity and lower noise compared to standard PIN detectors, making them ideal for applications with low optical power levels. In addition to our standard APDs, versions featuring variable gain (i.e., M factor) and/or temperature compensation are offered.
In general, avalanche photodiodes use an internal gain mechanism to increase sensitivity. A high reverse bias voltage is applied to the diodes to create a strong electric field. When an incident photon generates an electron-hole pair, the electric field accelerates the electrons, leading to the production of secondary electrons by impact ionization. The resulting electron avalanche can produce a gain factor of several hundred times, described by a multiplication factor, M, that is a function of both the reverse bias voltage and temperature. In general, the M factor increases with lower temperatures and decreases with higher temperatures. Similarly, the M factor will increase when the reverse bias voltage is raised and decrease when the reverse bias voltage is lowered.
keyword : imaging, fiber photometry, thorlabs
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